Capabilities
Analytical Techniques
An extensive array of material analysis techniques including electron imaging, surface science, mass spectroscopy, and chemical analysis.
21 techniques
Scanning Electron Microscopy / Energy Dispersive X-Ray Spectroscopy
A focused electron beam scanned across a sample surface generates images that provide topographical and structural information, with EDS adding elemental analysis.
DetailsTEM – EDS/EELSTransmission Electron Microscopy – EDS / EELS
Forward scattering of a high-energy electron beam transmitted through a sample forms images from regions as small as several nanometers, with EDS/EELS for composition.
DetailsFIBFocused Ion Beam
A highly focused ion beam locally sputters/mills materials to expose buried regions and prepare precise sub-micron samples for TEM or SEM.
DetailsAFMAtomic Force Microscopy
Scanning a nanometer-scale tip over a sample produces a three-dimensional view of the surface topology with ultra-high lateral and vertical resolution.
DetailsXPS – ESCAX-ray Photoelectron Spectroscopy / Electron Spectroscopy for Chemical Analysis
An extremely surface-sensitive chemical analysis technique that measures the elements and chemical states of the outermost 20-50 Å of a material.
DetailsSIMSSecondary Ion Mass Spectroscopy
A high-energy ion beam sputters solid samples and a mass spectrometer counts the expelled ions, yielding elemental concentration as a function of depth.
DetailsHR-ICP-MSHigh Resolution Inductively Coupled Plasma Mass Spectrometry
An elemental analysis technique that identifies and measures trace metals in liquid solutions down to sub-ppt concentrations.
DetailsVPD – ICP-MSVapor Phase Decomposition Inductively Coupled Plasma Mass Spectroscopy
Trace elements on a silicon wafer surface are collected into a liquid sample via vapor phase decomposition, then analyzed by HR-ICP-MS.
DetailsICP-OESInductively Coupled Plasma Optical Emission Spectrometry
Measures major, minor and bulk trace elements in liquid suspensions and digested solids in the 1 ppb to 1000+ ppm range.
DetailsNAANeutron Activation Analysis
Measures bulk elemental composition by irradiating samples with neutrons and analyzing the characteristic gamma rays emitted as activated isotopes decay.
DetailsICIon Chromatography
Separates, identifies and measures ionic species dissolved in water, with detection limits typically 5-10 ppb for common anions and cations.
DetailsTOCTotal Organic Carbon
An automated analyzer measures the total amount of organic carbon in water solutions with sensitivity of approximately 0.1 ppm.
DetailsATD GC-MSAutomated Thermal Desorption Gas Chromatography Mass Spectrometry
Common analysis for organics in solvents such as IPA and MIBC, including purge and trap GC-MS.
DetailsRBSRutherford Backscattering Analysis
A high-energy ion beam bombards the sample surface; elastic and inelastic collisions provide chemical and thickness information non-destructively and standard-less.
DetailsERDAElastic Recoil Detection Analysis
An ion beam analysis used to depth profile light elements, most commonly hydrogen or deuterium, non-destructively and standard-less.
DetailsPIXEParticle Induced X-Ray Emission
A high-energy ion beam bombards the sample surface; X-ray emissions provide chemical information about the elements present, non-destructively and standard-less.
DetailsNRANuclear Reaction Analysis
An ion beam analysis technique used for depth profiling of light elements. (Source page content pending.)
DetailsFTIRFourier Transform Infra-Red Spectrometry
Characterizes the chemical bonding present in solids, liquids and gases; for many organic compounds the infrared spectrum is a virtual fingerprint.
DetailsRamanRaman Spectroscopy
An inelastic light scattering technique that measures the vibrational spectra of molecules and solids, providing detailed information about chemical bonds.
DetailsXRD / XRRX-Ray Diffraction and X-Ray Reflectivity
Used to examine crystallographic structures of powders or films; XRR measures thin-film thickness, interfacial roughness and density.
DetailsTXRFTotal Reflection X-Ray Fluorescence Spectroscopy
A sensitive method for analysis of trace metals on a silicon wafer surface, analyzing only the near surface (about 400 Å) of the wafer.
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